DMN21D2UFB-7B

Name: DMN21D2UFB-7B
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 20V 760MA 3DFN

在产3-UFDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	990mOhm @ 100mA, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	27.6 pF @ 16 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	1V @ 250µA

漏源电压	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C	760mA (Ta)
最大功耗	380mW (Ta)

工作温度	-55°C~150°C(TJ)