DMN2022UFDF-7

Name: DMN2022UFDF-7
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 20V 7.9A 6UDFN

在产6-UDFN Exposed Pad模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	22mOhm @ 4A, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds	907 pF @ 10 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±8V
Vgs(th) (Max) @ Id	1V @ 250µA

漏源电压	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C	7.9A (Ta)
最大功耗	660mW (Ta)

工作温度	-55°C~150°C(TJ)