通用
| Rds On (Max) @ Id, Vgs | 18.5mOhm @ 7A, 10V |
|---|---|
| 基础料号 | DMN2019 |
| 配置 | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 143pF @ 10V |
| 制造商 | Diodes Incorporated |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 技术 | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |