DMN10H700S-7

Name: DMN10H700S-7
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 100V 700MA SOT23

在产TO-236-3, SC-59, SOT-23-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	700mOhm @ 1.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	235 pF @ 50 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	700mA (Ta)
最大功耗	400mW (Ta)

封装	Tape & Reel (TR) Cut Tape (CT)