DMN1019USN-7

Name: DMN1019USN-7
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 12V 9.3A SC59

在产TO-236-3, SC-59, SOT-23-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	10mOhm @ 9.7A, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds	2426 pF @ 10 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±8V
Vgs(th) (Max) @ Id	800mV @ 250µA

漏源电压	12 V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 2.5V
Current - Continuous Drain (Id) @ 25°C	9.3A (Ta)
最大功耗	680mW (Ta)

工作温度	-55°C~150°C(TJ)