DMN1017UCP3-7

Name: DMN1017UCP3-7
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 12V 7.5A X3DSN1010-3

在产3-XDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	17mOhm @ 5A, 3.3V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 3.3 V
Input Capacitance (Ciss) (Max) @ Vds	1503 pF @ 6 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±8V
Vgs(th) (Max) @ Id	1V @ 250µA

漏源电压	12 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 3.3V
Current - Continuous Drain (Id) @ 25°C	7.5A (Ta)
最大功耗	1.47W

工作温度	-55°C ~ 150°C (TJ)