通用
| 基础料号 | DMN1003 |
|---|---|
| 配置 | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 56.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 3315pF @ 6V |
| 制造商 | Diodes Incorporated |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 技术 | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |

来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| 基础料号 | DMN1003 |
|---|---|
| 配置 | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 56.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 3315pF @ 6V |
| 制造商 | Diodes Incorporated |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 技术 | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Power - Max | 2.67W |
|---|
| 封装 | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-SMD, No Lead |
| 供应商器件封装 | X3-DSN3518-6 |
| 工作温度 | -55°C ~ 150°C (TJ) |
|---|