DMJ70H600SH3

Name: DMJ70H600SH3
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 700V 11A TO251

停产/老旧TO-251-3 Short Leads, IPak, TO-251AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	600mOhm @ 2.4A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	643 pF @ 25 V
制造商	Diodes Incorporated
安装类型	Through Hole
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	700 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
最大功耗	113W (Tc)

封装	Tube