DMJ70H1D3SK3-13

Name: DMJ70H1D3SK3-13
Brand: Diodes Incorporated

模拟与电源

MOSFET BVDSS: 651V~800V TO252 T&

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	1.4Ohm @ 1A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	264 pF @ 100 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 250µA

漏源电压	700 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	4.7A (Tc)
最大功耗	57W (Tc)

工作温度	-55°C~150°C(TJ)