DMHT10H032LFJ-13

Name: DMHT10H032LFJ-13
Brand: Diodes Incorporated

模拟与电源

MOSFET 4N-CH 100V 6A 12VDFN

在产12-PowerVDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	33mOhm @ 6A, 10V
基础料号	DMHT10
配置	4 N-Channel (Full Bridge)
Gate Charge (Qg) (Max) @ Vgs	11.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	683pF @ 50V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	100V
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Power - Max	900mW

工作温度	-55°C ~ 150°C (TJ)