DMHC10H170SFJ-13

Name: DMHC10H170SFJ-13
Brand: Diodes Incorporated

模拟与电源

MOSFET 2N/2P-CH 100V 2.9A 12VDFN

在产12-VDFN Exposed Pad模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	160mOhm @ 5A, 10V
基础料号	DMHC10
配置	2 N and 2 P-Channel (Full Bridge)
Gate Charge (Qg) (Max) @ Vgs	9.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1167pF @ 25V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3V @ 250µA

漏源电压	100V
Current - Continuous Drain (Id) @ 25°C	2.9A, 2.3A
Power - Max	2.1W

工作温度	-55°C ~ 150°C (TJ)