通用
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.1A, 10V |
|---|---|
| 基础料号 | DMG6602 |
| 配置 | N and P-Channel |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 15V |
| 制造商 | Diodes Incorporated |
| 安装类型 | Surface Mount |
| Product Status | Not For New Designs |
| 技术 | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |