DMG4N60SCT

Name: DMG4N60SCT
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 600V 4.5A TO220AB

停产/老旧TO-220-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	2.5Ohm @ 2A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	532 pF @ 25 V
制造商	Diodes Incorporated
安装类型	Through Hole
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4.5V @ 250µA

漏源电压	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	4.5A (Ta)
最大功耗	113W (Ta)

工作温度	-55°C ~ 150°C (TJ)