DMG4822SSDQ-13

Diodes Incorporated

DMG4822SSDQ-13

Datasheet

模拟与电源

MOSFET 2N-CH 30V 10A 8SO

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs21mOhm @ 8.5A, 10V
配置2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds478.9pF @ 16V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Power - Max1.42W (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SO

环境

GradeAutomotive
工作温度-55°C ~ 150°C (TJ)
QualificationAEC-Q101