DMG4511SK4-13

Diodes Incorporated

DMG4511SK4-13

Datasheet

模拟与电源

MOSFET N/P-CH 35V 5.3A TO252-4L

在产TO-252-5, DPak (4 Leads + Tab), TO-252AD模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs35mOhm @ 8A, 10V
基础料号DMG4511
配置N and P-Channel, Common Drain
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs18.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds850pF @ 25V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

电气

漏源电压35V
Current - Continuous Drain (Id) @ 25°C5.3A, 5A
Power - Max1.54W

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-5, DPak (4 Leads + Tab), TO-252AD
供应商器件封装TO-252-4L

环境

工作温度-55°C ~ 150°C (TJ)