DMG4468LFG

Diodes Incorporated

DMG4468LFG

Datasheet

模拟与电源

MOSFET N-CH 30V 7.62A 8DFN

已停产8-PowerUDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs15mOhm @ 11.6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs18.85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds867 pF @ 10 V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusDiscontinued at
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C7.62A (Ta)
最大功耗990mW (Ta)

机械

封装Tape & Reel (TR)
Package / Case8-PowerUDFN
供应商器件封装U-DFN3030-8

环境

工作温度-55°C ~ 150°C (TJ)