DMG4407SSS-13

Diodes Incorporated

DMG4407SSS-13

模拟与电源

MOSFET P-CH 30V 9.9A 8SO

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs11mOhm @ 12A, 20V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2246 pF @ 15 V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id3V @ 250µA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C9.9A (Ta)
最大功耗1.45W (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SO

环境

工作温度-50°C ~ 150°C (TJ)