DMC67D8UFDBQ-7

Name: DMC67D8UFDBQ-7
Brand: Diodes Incorporated

模拟与电源

MOSFET N/P-CH 60V 0.39A 6UDFN

在产6-UDFN Exposed Pad模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V
配置	N and P-Channel Complementary
Gate Charge (Qg) (Max) @ Vgs	0.4pC @ 4.5V, 7.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	41pF @ 25V, 443pF @ 16V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5V @ 250µA, 1.25V @ 250µA

漏源电压	60V, 20V
Current - Continuous Drain (Id) @ 25°C	390mA (Ta), 2.9A (Ta)
Power - Max	580mW (Ta)