DMC62D2SV-13

Diodes Incorporated

DMC62D2SV-13

Datasheet

模拟与电源

MOSFET N/P-CH 60V 0.48A SOT563

在产SOT-563, SOT-666模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
配置N and P-Channel Complementary
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs1.04nC @ 10V, 1.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds41pF @ 30V, 40pF @ 25V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA, 3V @ 250µA

电气

漏源电压60V
Current - Continuous Drain (Id) @ 25°C480mA (Ta), 320mA (Ta)
Power - Max500mW (Ta)

机械

封装Tape & Reel (TR)
Package / CaseSOT-563, SOT-666
供应商器件封装SOT-563

环境

工作温度-55°C ~ 150°C (TJ)