DMC6070LFDH-7

Diodes Incorporated

DMC6070LFDH-7

Datasheet

模拟与电源

MOSFET N/P-CH 60V 3.1A 8VDFN

停产/老旧8-VDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs85mOhm @ 1.5A, 10V
基础料号DMC6070
配置N and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds731pF @ 20V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

电气

漏源电压60V
Current - Continuous Drain (Id) @ 25°C3.1A, 2.4A
Power - Max1.4W

机械

封装Tape & Reel (TR)
Package / Case8-VDFN
供应商器件封装V-DFN3030-8

环境

工作温度-55°C ~ 150°C (TJ)