DMC3730UFL3-7

Diodes Incorporated

DMC3730UFL3-7

Datasheet

模拟与电源

MOSFET N/P-CHA 30V 1.1A DFN1310

在产6-XFDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs460mOhm @ 200mA, 4.5V
配置N and P-Channel Complementary
Gate Charge (Qg) (Max) @ Vgs0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds65.9pF @ 25V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id950mV @ 250µA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C1.1A, 700mA
Power - Max390mW

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case6-XFDFN Exposed Pad
供应商器件封装X2-DFN1310-6 (Type B)

环境

GradeAutomotive
工作温度-55°C ~ 150°C (TJ)
QualificationAEC-Q101