DMC3032LFDB-13

Diodes Incorporated

DMC3032LFDB-13

Datasheet

模拟与电源

MOSFET N/P-CH 30V 5.3A 6UDFN

在产6-UDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V
基础料号DMC3032
配置N and P-Channel Complementary
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs10.6nC @ 10V, 7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds500pF @ 15V, 336pF @ 25V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA, 2.1V @ 250µA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C5.3A (Ta), 3.4A (Ta)
Power - Max800mW

机械

封装Bulk
Package / Case6-UDFN Exposed Pad
供应商器件封装U-DFN2020-6 (Type B)

环境

工作温度-55°C ~ 150°C (TJ)