DMC3018LSD-13

Diodes Incorporated

DMC3018LSD-13

Datasheet

模拟与电源

MOSFET N/P-CH 30V 9.1A/6A 8SO

停产/老旧8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs20mOhm @ 6.9A, 10V
基础料号DMC3018
配置N and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs12.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds631pF @ 15V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1V @ 250µA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C9.1A, 6A
Power - Max2.5W

机械

封装Tape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SO

环境

工作温度-55°C ~ 150°C (TJ)