DMC3016LDV-7

Diodes Incorporated

DMC3016LDV-7

Datasheet

模拟与电源

MOSFET N/P-CH 30V 21A PWRDI3333

在产8-PowerVDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V
配置N and P-Channel Complementary
Gate Charge (Qg) (Max) @ Vgs9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1184pF @ 15V, 1188pF @ 15V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.4V @ 250µA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C21A (Tc), 15A (Tc)
Power - Max900mW (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
供应商器件封装PowerDI3333-8

环境

GradeAutomotive
工作温度-55°C ~ 150°C (TJ)
QualificationAEC-Q101