DMC10H220LSD-13

Diodes Incorporated

DMC10H220LSD-13

Datasheet

模拟与电源

MOSFET N/P-CH 100V 1.7A 8SO

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs220mOhm @ 1.6A, 10V, 250mOhm @ 1A, 10V
基础料号DMC10
配置N and P-Channel Complementary
Gate Charge (Qg) (Max) @ Vgs8.3nC @ 10V, 17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds340pF @ 50V, 1030pF @ 50V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

电气

漏源电压100V
Current - Continuous Drain (Id) @ 25°C1.7A (Ta)
Power - Max1W (Ta)

机械

封装Tape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SO

环境

工作温度-55°C ~ 150°C (TJ)