DMC1017UPD-13

Diodes Incorporated

DMC1017UPD-13

模拟与电源

MOSFET N/P-CH 12V 13A PWRDI50

停产/老旧8-PowerTDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs17mOhm @ 11.8A, 4.5V, 32mOhm @ 8.9A, 4.5V
配置N and P-Channel Complementary
Gate Charge (Qg) (Max) @ Vgs18.6nC @ 4.5V, 23.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1787pF @ 6V, 2100pF @ 6V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

电气

漏源电压12V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 9.4A (Ta)
Power - Max2.3W

机械

封装Tape & Reel (TR)
Package / Case8-PowerTDFN
供应商器件封装PowerDI5060-8

环境

GradeAutomotive
工作温度-55°C ~ 150°C (TJ)
QualificationAEC-Q101