D2G-T

Diodes Incorporated

D2G-T

Datasheet

模拟与电源

DIODE GEN PURP 100V 1A T-1

在产T1, Axial模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号D2G
Capacitance @ Vr, F8pF @ 4V, 1MHz
制造商Diodes Incorporated
安装类型Through Hole
Product StatusActive
Reverse Recovery Time (trr)2 µs
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If1 V @ 1 A
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr5 µA @ 100 V
速度Standard Recovery >500ns, > 200mA (Io)

机械

封装Tape & Reel (TR)
Package / CaseT1, Axial
供应商器件封装T-1

环境

Operating Temperature - Junction-65°C ~ 150°C