BAS116LPH4-7B

Diodes Incorporated

BAS116LPH4-7B

Datasheet

模拟与电源

DIODE GEN PURP 85V 215MA 2DFN

在产0402 (1006 Metric)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号BAS116
Capacitance @ Vr, F1.5pF @ 0V, 1MHz
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
Reverse Recovery Time (trr)3 µs
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)85 V
Voltage - Forward (Vf) (Max) @ If1.25 V @ 150 mA
Current - Average Rectified (Io)215mA
Current - Reverse Leakage @ Vr5 nA @ 75 V
速度Standard Recovery >500ns, > 200mA (Io)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case0402 (1006 Metric)
供应商器件封装X2-DFN1006-2

环境

Operating Temperature - Junction-55°C ~ 150°C