通用
| 基础料号 | 2DB1182 |
|---|---|
| 制造商 | Diodes Incorporated |
| 安装类型 | Surface Mount |
| Product Status | Active |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
|---|---|
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 3V |
| Power - Max | 10 W |
| Frequency - Transition | 110MHz |
机械
| 封装 | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| 供应商器件封装 | TO-252-3 |
环境
| 工作温度 | -55°C ~ 150°C (TJ) |
|---|