CMSP2011A6-HF

Name: CMSP2011A6-HF
Brand: Comchip Technology

模拟与电源

MOSFET P-CH 20VDS 12VGS 11A DFNW

在产6-WDFN Exposed Pad模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	24mOhm @ 7.2A, 4.5V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	1580 pF @ 6 V
制造商	Comchip Technology
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	1V @ 250µA

漏源电压	20 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C	11A (Ta)
最大功耗	750mW (Ta)

工作温度	150°C(TJ)