CMS75P06CT-HF

Comchip Technology

CMS75P06CT-HF

Datasheet

模拟与电源

MOSFET P-CH 60V 75A TO220AB

停产/老旧TO-220-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs9.5mOhm @ 30A, 10V
基础料号CMS75
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8620 pF @ 25 V
制造商Comchip Technology
安装类型Through Hole
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

电气

漏源电压60 V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
最大功耗2W (Ta), 183W (Tc)

机械

封装Tape & Reel (TR)
Package / CaseTO-220-3
供应商器件封装TO-220AB

环境

工作温度-55°C~150°C(TJ)