CMS35N04V8-HF

Comchip Technology

CMS35N04V8-HF

Datasheet

模拟与电源

MOSFET N-CH 40V 35A 8DFN

停产/老旧8-PowerWDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs9mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1220 pF @ 25 V
制造商Comchip Technology
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

电气

漏源电压40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
最大功耗2W (Ta), 44W (Tc)

机械

封装Tape & Reel (TR)
Package / Case8-PowerWDFN
供应商器件封装8-PDFN (SPR-PAK ) (3.3x3.3)

环境

工作温度-55°C ~ 150°C (TJ)