CMS32P03V8-HF

Comchip Technology

CMS32P03V8-HF

Datasheet

模拟与电源

MOSFET P-CH 30V 7.7A/32A 8DFN

停产/老旧8-PowerWDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs20mOhm @ 15A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1345 pF @ 15 V
制造商Comchip Technology
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C7.7A (Ta), 32A (Tc)
最大功耗1.6W (Ta), 29W (Tc)

机械

封装Tape & Reel (TR)
Package / Case8-PowerWDFN
供应商器件封装8-PDFN (SPR-PAK ) (3.3x3.3)

环境

工作温度-55°C ~ 150°C (TJ)