CMS100N03H8-HF

Comchip Technology

CMS100N03H8-HF

Datasheet

模拟与电源

MOSFET N-CH 30V 100A DFN5X6

停产/老旧8-PowerTDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.8mOhm @ 30A, 10V
基础料号CMS100
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4222 pF @ 15 V
制造商Comchip Technology
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

电气

漏源电压30 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
最大功耗3.6W (Ta), 83W (Tc)

机械

封装Tape & Reel (TR)
Package / Case8-PowerTDFN
供应商器件封装DFN5x6 (PR-PAK)

环境

工作温度-55°C~150°C(TJ)