CDBJSC3650-G

Comchip Technology

CDBJSC3650-G

Datasheet

模拟与电源

DIODE SIL CARBIDE 650V 3A TO220F

在产TO-220-2 Full Pack模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号CDBJSC3650
Capacitance @ Vr, F190pF @ 0V, 1MHz
制造商Comchip Technology
安装类型Through Hole
Product StatusActive
Reverse Recovery Time (trr)0 ns
技术SiC (Silicon Carbide) Schottky

电气

Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 3 A
Current - Average Rectified (Io)3A
Current - Reverse Leakage @ Vr100 µA @ 650 V
速度No Recovery Time > 500mA (Io)

机械

封装Tube
Package / CaseTO-220-2 Full Pack
供应商器件封装TO-220F

环境

Operating Temperature - Junction-55°C ~ 175°C