CDBJSC101200-G

Comchip Technology

CDBJSC101200-G

Datasheet

模拟与电源

DIODE SIL CARB 1.2KV 10A TO220-2

停产/老旧TO-220-2模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号CDBJSC101200
Capacitance @ Vr, F780pF @ 0V, 1MHz
制造商Comchip Technology
安装类型Through Hole
Product StatusObsolete
Reverse Recovery Time (trr)0 ns
技术SiC (Silicon Carbide) Schottky

电气

Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 10 A
Current - Average Rectified (Io)10A
Current - Reverse Leakage @ Vr100 µA @ 1200 V
速度No Recovery Time > 500mA (Io)

机械

封装Tube
Package / CaseTO-220-2
供应商器件封装TO-220-2

环境

Operating Temperature - Junction-55°C ~ 175°C