CDBDSC51200-G

Comchip Technology

CDBDSC51200-G

Datasheet

模拟与电源

DIODE SIL CARBIDE 1.2KV 18A DPAK

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号CDBDSC51200
Capacitance @ Vr, F475pF @ 0V, 1MHz
制造商Comchip Technology
安装类型Surface Mount
Product StatusActive
Reverse Recovery Time (trr)0 ns
技术SiC (Silicon Carbide) Schottky

电气

Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 5 A
Current - Average Rectified (Io)18A
Current - Reverse Leakage @ Vr100 µA @ 1200 V
速度No Recovery Time > 500mA (Io)

机械

封装Tube
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件封装DPAK

环境

Operating Temperature - Junction-55°C ~ 175°C