CDBD2SC21200-G

Comchip Technology

CDBD2SC21200-G

Datasheet

模拟与电源

DIODE SIL CARB 1.2KV 6.2A TO263

在产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号CDBD2
Capacitance @ Vr, F136pF @ 0V, 1MHz
制造商Comchip Technology
安装类型Surface Mount
Product StatusActive
Reverse Recovery Time (trr)0 ns
技术SiC (Silicon Carbide) Schottky

电气

Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 2 A
Current - Average Rectified (Io)6.2A
Current - Reverse Leakage @ Vr100 µA @ 1200 V
速度No Recovery Time > 500mA (Io)

机械

封装Tube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
供应商器件封装TO-263 (D²Pak)

环境

Operating Temperature - Junction-55°C ~ 175°C