通用
| 基础料号 | MPQ6002 |
|---|---|
| 制造商 | Central Semiconductor Corp |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| Transistor Type | 2 NPN, 2 PNP |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 30mA, 300mA |

来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| 基础料号 | MPQ6002 |
|---|---|
| 制造商 | Central Semiconductor Corp |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| Transistor Type | 2 NPN, 2 PNP |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 30mA, 300mA |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
|---|---|
| Current - Collector (Ic) (Max) | 500mA |
| Current - Collector Cutoff (Max) | 30nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V |
| Power - Max | 650mW |
| Frequency - Transition | 200MHz |
| 封装 | Tube |
|---|---|
| Package / Case | 14-DIP (0.300", 7.62mm) |
| 供应商器件封装 | TO-116 |
| 工作温度 | -65°C ~ 150°C (TJ) |
|---|