CTLDM8120-M621H TR

Name: CTLDM8120-M621H TR
Brand: Central Semiconductor Corp

模拟与电源

MOSFET P-CH 20V 950MA TLM621H

停产/老旧6-XFDFN Exposed Pad模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	150mOhm @ 950mA, 4.5V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	3.56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 16 V
制造商	Central Semiconductor Corp
安装类型	Surface Mount
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	8V
Vgs(th) (Max) @ Id	1V @ 250µA

漏源电压	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C	950mA (Ta)
最大功耗	1.6W (Ta)

工作温度	-65°C~150°C(TJ)