CTLDM303N-M832DS TR

Central Semiconductor Corp

CTLDM303N-M832DS TR

Datasheet

模拟与电源

MOSFET 2N-CH 30V 3.6A TLM832DS

停产/老旧8-TDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs40mOhm @ 1.8A, 4.5V
基础料号CTLDM303N
配置2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds590pF @ 10V
制造商Central Semiconductor Corp
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2V @ 250µA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C3.6A
Power - Max1.65W

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-TDFN Exposed Pad
供应商器件封装TLM832DS

环境

工作温度-55°C ~ 150°C (TJ)