2N5306 TIN/LEAD

Central Semiconductor Corp

2N5306 TIN/LEAD

Datasheet

模拟与电源

TRANS NPN DARL 25V 0.3A TO92-3

在产TO-226-3, TO-92-3 (TO-226AA)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

制造商Central Semiconductor Corp
安装类型Through Hole
Product StatusActive
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic1.4V @ 200µA, 200mA

电气

Voltage - Collector Emitter Breakdown (Max)25 V
Current - Collector (Ic) (Max)300 mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce7000 @ 2mA, 5V
Power - Max625 mW
Frequency - Transition60MHz

机械

封装Bulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
供应商器件封装TO-92-3

环境

工作温度-65°C ~ 150°C (TJ)