通用
| Rds On (Max) @ Id, Vgs | 280mOhm @ 600mA, 12V |
|---|---|
| FET Feature | Current Sensing |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 12 V |
| 制造商 | Cambridge GaN Devices |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 系列 | ICeGaN™ |
| 技术 | GaNFET (Gallium Nitride) |
| Vgs (Max) | +20V, -1V |
| Vgs(th) (Max) @ Id | 4.2V @ 2.75mA |