2N7002E

Name: 2N7002E
Brand: ANBON SEMICONDUCTOR (INT'L) LIMITED

模拟与电源

N-CHANNEL SMD MOSFET ESD PROTECT

在产TO-236-3, SC-59, SOT-23-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	5Ohm @ 300mA, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	18 pF @ 30 V
制造商	ANBON SEMICONDUCTOR (INT'L) LIMITED
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	340mA (Ta)
最大功耗	350mW (Ta)

工作温度	150°C(TJ)