AOTF2606L

Alpha & Omega Semiconductor Inc

AOTF2606L

模拟与电源

MOSFET N-CH 60V 13A/54A TO220-3F

在产TO-220-3 Full Pack模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs6.5mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4050 pF @ 30 V
制造商Alpha & Omega Semiconductor Inc.
安装类型Through Hole
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 250µA

电气

漏源电压60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 54A (Tc)
最大功耗2.1W (Ta), 36.5W (Tc)

机械

封装Tube
Package / CaseTO-220-3 Full Pack
供应商器件封装TO-220F

环境

工作温度-55°C ~ 175°C (TJ)