AONX38168

Alpha & Omega Semiconductor Inc

AONX38168

模拟与电源

MOSFET 2N-CH 25V 25A/62A 8DFN

在产8-VDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
基础料号AONX381
配置2 N-Channel (Dual) Asymmetrical
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V, 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1150pF @ 12.5V, 4520pF @ 12.5V
制造商Alpha & Omega Semiconductor Inc.
安装类型Surface Mount
Product StatusActive
系列XSPairFET™
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.9V @ 250µA, 1.8V @ 250µA

电气

漏源电压25V
Current - Continuous Drain (Id) @ 25°C25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
Power - Max3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-VDFN Exposed Pad
供应商器件封装8-DFN (5x6)

环境

工作温度-55°C ~ 150°C (TJ)