AONP36332

Alpha & Omega Semiconductor Inc

AONP36332

模拟与电源

MOSFET 2N-CH 30V 24A/50A 8DFN

在产8-PowerVDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs3.7mOhm @ 20A, 10V, 4.7mOhm @ 20A, 10V
基础料号AONP363
配置2 N-Channel (Dual) Asymmetrical
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V, 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1520pF @ 15V
制造商Alpha & Omega Semiconductor Inc.
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.9V @ 250µA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C24A (Ta), 50A (Tc), 20A (Ta), 50A (Tc)
Power - Max3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
供应商器件封装8-DFN-EP (3.3x3.3)

环境

工作温度-55°C ~ 150°C (TJ)