AON6922

Alpha & Omega Semiconductor Inc

AON6922

模拟与电源

MOSFET 2N-CH 25V 18A/31A 8DFN

停产/老旧8-WDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs3.8mOhm @ 20A, 10V
基础料号AON692
配置2 N-Channel (Dual) Asymmetrical
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2340pF @ 12.5V
制造商Alpha & Omega Semiconductor Inc.
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.7V @ 250µA

电气

漏源电压25V
Current - Continuous Drain (Id) @ 25°C18A, 31A
Power - Max2W, 2.2W

机械

封装Tape & Reel (TR)
Package / Case8-WDFN Exposed Pad
供应商器件封装8-DFN-EP (5x6)

环境

工作温度-55°C ~ 150°C (TJ)