AON5802A

Alpha & Omega Semiconductor Inc

AON5802A

模拟与电源

MOSFET 2N-CH 30V 7.2A 6DFN

停产/老旧6-WFDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs20mOhm @ 7.2A, 4.5V
基础料号AON5802
配置2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs10.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1115pF @ 15V
制造商Alpha & Omega Semiconductor Inc.
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C7.2A
Power - Max1.7W

机械

封装Tape & Reel (TR)
Package / Case6-WFDFN Exposed Pad
供应商器件封装6-DFN-EP (2x5)

环境

工作温度-55°C ~ 150°C (TJ)