AOM065V120X2Q

Alpha & Omega Semiconductor Inc

AOM065V120X2Q

模拟与电源

1200V SILICON CARBIDE MOSFET

在产TO-247-4模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs85mOhm @ 10A, 15V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs62.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds1716 pF @ 800 V
制造商Alpha & Omega Semiconductor Inc.
安装类型Through Hole
Product StatusActive
技术SiC (Silicon Carbide Junction Transistor)
Vgs (Max)+15V, -5V
Vgs(th) (Max) @ Id3.5V @ 10mA

电气

漏源电压1200 V
Drive Voltage (Max Rds On, Min Rds On)15V
Current - Continuous Drain (Id) @ 25°C40.3A (Tc)
最大功耗187.5W (Ta)

机械

封装Tube

环境

GradeAutomotive
工作温度-55°C ~ 175°C (TJ)
QualificationAEC-Q101